Technology/Products

AP Systems, moving forward into the world with a passion for endless research and technological developments

Plasma  Application  Technology

We possess assembly and etching equipment that is used in semiconductor and display process using plasma.

  • Semiconductor Field: Plasma Etch and Assembly (PECVD, and Sputter), and Ashing equipment to remove PR
  • Display Field: TEF Process Equipment
  • Evaporation
  • Thin Film Encapsulation
  • Sputter System
  • Ashing
  • Dry Strip System
  • Descum System

Thin Film Encapsulation

KORONA™ TFE System

  • Film structure deposition for the sealant to prevent oxygen and moisture penetration into AMOLED device
  • It can be applied to maximum size of Generation 6, 2 Partition board
  • Flexible sealant deposition to realize Flexible, rollable, and foldable display

Technology

  • ALD (Atomic Layer Deposition) of Multi-linear Nozzle
  • Highly clean film deposition technology through in-situ cleaning and gas flow control technology
  • Stress control and water vapor permeability optimization technology through multi-layer film design technology

Features

  • ICP antenna design technology (high density/low damage plasma)
  • Susceptor design technology (possible to remove polymer at the back side and prevent bending of the wafer)
  • Pre-Heating (Halogen Lamp) control and process technology
  • Functional Transfer Robot (Wafer Alignment)

Specification

Substrate Loading Generation 6, 2 Partition, 925mm x 1500 mm
Board Temperature Max. 90℃
Water Vapor Permeability < 5e-5 g/m2/day @ 1000Å, SiNx/SiOx multi-layer structure
Film Thickness Uniformity < 5%
Light Transmittance > 90% @ all the ranges of visible light
Stress <±100 MPa

Sputter System

KORONA™ PVD600_ Advanced Package Process

  • Semiconductor Advanced Package Sputter
  • Following the high capacity, faster, and smaller trends of semiconductor devices, semiconductor Packaging technology has also been developed from the previous Wire bonding to Flip Chip, and recently to FOWLP/FOPLP and 3D Packaging.
  • As the semiconductor Packaging technology is being developed, we at AP Systems, are providing client companies with Sputtering equipment for manufacturing relevant metal films (CPB, and RDL).

Technology

  • Substrate Shift Detection & Align Technology when entering into each chamber
  • ESC technology for low temperature (-20℃) to secure optimal process (@ Preclearing & Process)
  • Multi Plate Heating System composition technology for Long Term Degas Time (at least 30mins.) & High Temp. Uniformity
  • Plasma technology in the CCP form applied in Situ Pasting for the Lower Particles
  • Magnetron Sputtering Source technology for High Film Quality and Film Uniformity (Magnetron Scan & Tilt for FOPLP)
  • Software Tool (Easy ClusterTM) operating technology applied to various equipment and based on verification

Features

PVD600: CPB & FOWLP

  • Board Information: Diameter 300mm including EMC (Epoxy Molding Compound)
  • EFEM, 2LoadLock, Octagonal Transfer Chamber, 2Multi_Degas Chamber, 2Pre-Cleaning Chamber (CCP) & 2Process Module

PVD600_R450: FOPLP

  • Board Information: Rectangular (Approximately 400 x 500mm2) type with PCB like
  • EFEM, 2LoadLock, Octagonal Transfer Chamber, 2Multi_Degas Chamber, 2Precleaning Chamber (CCP) & 2Process Module (Vertical Process)

Specification

Substrate Loading Generation 6, 2 Partition, 925mm x 1500 mm
Substrate Temperature Max. 90℃
Water Vapor Transmission Rate < 5e-5 g/m2/day @ 1000Å, SiNx/SiOx multi-layer structure
Thickness Uniformity < 5%
Optical Transmittance > 90% @ all the ranges of visible light
Stress <±100 MPa

Technology

  • Substrate Shift Detection & Align Technology when entering into each chamber
  • ESC technology for low temperature (-20℃) to secure optimal process (@ Precleaning & Process)
  • Multi Plate Heating System composition technology for Long Term Degas Time (at least 30mins.) & High Temp. Uniformity
  • Plasma technology in the CCP form applied in Situ Pasting for the Lower Particles
  • Magnetron Sputtering Source technology for High Film Quality and Film Uniformity (Magnetron Scan & Tilt for FOPLP)
  • Software Tool (Easy ClusterTM) operating technology applied to various equipment and based on verification

Features

PVD600: Single Backbone

  • EFEM, 2LoadLock, Octagonal Transfer Chamber, Single Degas Chamber, Pre-Cleaning Chamber (ICP) & 2Process Module

PVD1000: Dual Backbone

  • EFEM, 2LoadLock, 2Octagonal Transfer Chamber, 2Single Degas Chamber, 2Precleaning Chamber (ICP) & 4Process Module

Specification

Common Temperature Uniformity(@ Degas of 300℃): ≤ 5%
Etch Uniformity(@ Pre-Cleaning) :≤ 5%
Film Uniformity(@ Process) : ≤ 3%
Throughput (@ Ti : 250Å,
Al : 6000Å, TiN : 250Å)
PVD600 : ≥ 39 sheets/hr
PVD1000 : ≥ 52 sheets/hr

Dry Strip System

KORONA™ DSS300

  • Semiconductor Photoresist STRIP System
  • It is a system to remove Photoresist and ACL (Amorphous Carbon Layer) applied as a mask layer after etching and ion injection processes during the semiconductor manufacturing process.

Technology

  • High ion concentration using high frequency helical inductively coupled plasma
  • Damage due to low plasma following the differentiation of ICP antenna structure
  • Simplified large volume plasma reactor and internal structure of the chamber
  • Minimized thermal damage of the board through Pre-Heating Module (TM)
  • Minimized the CoC (Cost of Consumables)

Features

  • ICP Antenna design technology (high density/low damage plasma)
  • Susceptor design technology (possible to remove polymer at the back side and prevent bending of the wafer)
  • Pre-Heating (Halogen Lamp) control and process technology
  • Functional Transfer Robot (Wafer Alignment)

Specification

Substrate Loading Generation 6, 2 Partition, 925mm x 1500 mm
Substrate Temperature Max. 90℃
Water Vapor Transmission Rate < 5e-5 g/m2/day @ 1000Å, SiNx/SiOx multi-layer structure
Thickness Uniformity < 5%
Optical Transmittance > 90% @ all the ranges of visible light
Stress <±100 MPa

Descum System

KORONA™ DSC300

  • Semiconductor Descum System
  • It is a plasma treatment system that removes scums in the lateral walls of the pattern before electroplating, or performs surface modification to improve adhesive power, when forming Bump to be used in Flip Chip Bonding in the wafer.

Technology

  • ICP Antenna design technology (high density/low damage plasma)
  • Control process uniformity (design optimized Pedestal and focus ring)
  • Plasma stability (design optimized interior of the chamber)
  • Functional Transfer Robot (wafer alignment)

Features

  • High etch rate using the helical inductively coupled plasma
  • Simplified large volume plasma reactor and internal structure of the chamber
  • Easy to control process uniformity
  • Minimized the CoC (Cost of Consumables)

Specification

  • Helical Resonance ICP Plasma(27.12MHz)
    (Ion Density: >1E12 cm-3 , Electron Temperature < 1eV)
  • Cooling Pedestal: 0 ~ 40°C
  • 4-Arm, 7-axis vacuum robot (including AWC function)
  • Formation/control of independent chambers (possible to apply 6-chambers)