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Display(Front-End Process)

Plasma Enhanced Atomic Layer Deposition System(KORONA™ ALD)

  • KORONATM ALD can be deposited in a low temperature compared to thermal ALD by using plasma
  • Application : Active layer, Buffer layer, Encapsulation layer

Technology

  • Large area deposition system using plasma scanning
  • Large area deposition system using gas nozzles
  • Large area deposition system using laminar flow & showerhead

Features

  • Good step coverage
  • Long PM period
  • High deposition rate
  • High density thin film
  • High throughput

Specification

System Configuration 1 Process Chamber(2 Reactor)
2 Slot Loadlock(Semi Auto Loading)
Substrate Size 730 X 920mm
Film Uniformity <±3%
Sub. temperature 25℃ ~ 250℃
Process Pressure 1 ~ 10 torr
Precursor Source TMA, DEZ, DIPAS, DADI, TEGa, O2, Ar, N2, H2O…
Foot print 1200(W)*4500(L)*2400(H)
Deposition ALD(Atomic Layer Deposition)
- Plasma function included
Control PC Control