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Display(Front-End Process)
Plasma Enhanced Chemical Layer Deposition System (KORONA™ CVD)
- Thin film encapsulation deposition system for Micro-OLED
Technology
- Thin film encapsulation layer deposition at low temperature (80℃)
→ Minimized OLED device damage - Excellent WVTR of SiNx & SiON → Minimized thickness of encapsulation layer
- Applied RPS(Remote Plasma System) cleaning
Features
- Excellent thickness uniformity of thin film
- Mask align
- RPS(Remote Plasma System) Cleaning
Specification
| Item | Specification | |
|---|---|---|
| Hardware | Substrate | 8 inch, 12 inch Wafer (EE : 3mm) 200 x 200mm Glass |
| Plasma source | CCP type | |
| RF generator | 13.56 MHz, 1.1 kW | |
| Substrate temperature | 80℃ ± 2℃ | |
| Base pressure | ≤ 1E-3 Torr (TBD) | |
| Process gas | SiH4, NH3, N2O, N2, H2 | |
| In-situ cleaning gas | NF3, Ar | |
| Process | Deposition material | SiNx, SiOx, SiON |
| Deposition rate | ≥3000Å/min | |
| Thickness uniformity | ≤ ± 3% | |
| Stress | ≤ ± 100 MPa | |
| WVTR | ≤ 5E-4 g/m²/day @ SiNx 1μm | |
| ≤ 5E-4 g/m²/day @ SiON 1μm | ||
| ≤ 1E-3 g/m²/day @ SiOx 1μm | ||
