끊임없는 연구와 기술 개발에 대한 열정을 가지고 세계로 나아가는 AP시스템
Item | Specification | |
---|---|---|
Hardware | Substrate | 8 inch, 12 inch Wafer (EE : 3mm) 200 x 200mm Glass |
Plasma source | CCP type | |
RF generator | 13.56 MHz, 1.1 kW | |
Substrate temperature | 80℃ ± 2℃ | |
Base pressure | ≤ 1E-3 Torr (TBD) | |
Process gas | SiH4, NH3, N2O, N2, H2 | |
In-situ cleaning gas | NF3, Ar | |
Process | Deposition material | SiNx, SiOx, SiON |
Deposition rate | ≥3000Å/min | |
Thickness uniformity | ≤ ± 3% | |
Stress | ≤ ± 100 MPa | |
WVTR | ≤ 5E-4 g/m²/day @ SiNx 1μm | |
≤ 5E-4 g/m2/day @ SiON 1μm | ||
≤ 1E-3 g/m2/day @ SiOx 1μm |